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CD4148WSPN (0805) PDF 列印 E-mail
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作者是 CD4148WSPN (0805 100V)   
週二, 15 十二月 2009 12:05

FEATURE:
This diode is also available in case styles uncluding the 1206 case with the designation.Chip Switching Diode
CD4148WP and the 0603 case with the type disignation CD4148WTP.
Silicon Epitaxial Planar Diode.
  Lead free and RoHS compliance components.
Fast switvhing diode.
   CD4148WSPN (0805  0.15A  100V)
ELECTRICAL CHARACTERISTICS   
Parameter at Tamb = 25Symbol ValueUnit
Repetitive Peak Reverse VoltageVrrm (VPK)100V
Forward Continuos Current:IFM300mA
Average rectified current sin half wave rectification with resistive load f>50HzIF(AV)150¹mA
Surge Forward Current at t<1s and and Tj=25IFSM500mA
Power DissipationPtot400¹mW
Forward Voltage at IF=100mAVF1.0 maxV
Leakage Current at = VR=20VIR25 maxnA
Leakage Current at = VR=75VIR5 maxμA
Leakage Current at = VR=20V, TJ=150IR50 maxμA
Capacitance at VF=VR=0VCtot4 maxpF
Voltage rise when switching ON, Testes with 50mA pulses, Vfr2.5 maxV
TP=0.1us, risetime <20ns,  Fp=(5-100)KHz.   
Reverse Recovery Time at IF=100mA to IR=1mA, VR=V6, RL=100Ωtrr4.0 maxns
Rectification efficiency at f=100MHZ, VRF=2Vnr45 min%
1. Valid provided that electrodes are kept at ambient temperature.