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作者是 CDBAV21W (1206)   
週四, 14 五月 2009 22:03
 High Voltage Chip Switching Diode CD4148   
 CDBAV21W  (1206) 200V 0.25A   
    
FEATURE:   
Silicon epitaxial planer diode.   
SMD chip pattern, available in various dimension included 1206 & 0603.   
  Lead free and RoHS compliance components.     
    Dimension
MECHANICAL CHARACTERISTICS:    
Size : 1206   
Weight: Approx 1.0mg   
Marking: 21 as VRRM  250V high voltage switching diode   
    
MAXIMUM RATING:     

Parameter at Tamb = 25

Symbol 

Value

Unit

Continue Reverse Voltage

VR

200

V

Repetitvite Peak Reverse Voltage

VRRM

250

V

Non-Repetitive Peak Recerse Voltage

VRSM

250

V

Continous Forward Current

IF

250¹

mA

Average rectified current sin half wave

IF(AV)

200¹

mA

rectification with resistive load.

200¹

mA

Repetitive Peak Forward Current at f 50HZ, θ = 180°, Tamb = 25

IFRM

625¹

mA

Surge Forward Current at t<1s and Tj=25

IFSM

1000¹

mA

      
THERMAL CHARACTERISTICS:     

Parameter at Tamb = 25

Symbol 

Value

Unit

Forwar Power Dissipation

Ptot

400¹

mW

Power derating above 25

 

3.2

mW/

Junction Temperature

Tj

150¹

Thermal Resistance Junction to Ambient air

Roja

375¹

/W

Storage Temperature range

Tstg

-55 to 150¹

1. Valid provided that electrodes are kept at ambient temperature.     

 

 

最近更新在 週一, 01 六月 2009 21:00